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Process Induced Defects: Stacking Faults

Material Name: Silicon
Record No.: 28
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: No data
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Website https://www.tf.uni-kiel.de/matwis/amat/elmat_en/index.html, 2020.


Figure 1: The stacking faults are shown by a grove along their intersection with the surface, always bound by two deep etch pits denoting the Frank partials bounding the stacking fault.