Alphabetical Index
Browse by Elements
Keyword Search

Dry Etchants
Dry and Wet Etchants
Wet Etchants

Bulk Etchants
Layer Etchants
Nano Etchants
Single Crystal Etchants
Thin Film Etchants
Thin Foil Etchants
Wafer Etchants

Al Etchants
Cd Etchants
Ga Etchants
Ge Etchants
In Etchants
New Etchants
Other Etchants
Si Etchants
Zn Etchants

Help
Home

Grown-in Dislocations and Sub-grain Boundaries - CdZnTe

Material Name: CdZnTe
Record No.: 37
Primary Chemical Element in Material: Cd
Sample Type: Single crystal
Uses: Polishing, etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Anwar Hossain, Etch pits in CdZnTe and other CdTe-based Crystals, Presented at the MRS Spring Meeting, April 1 – 5, 2013, Brookhaven National Laboratory, PowerPoint Presentation, pp. 1-27.


Figure 1: Grown-in dislocations and sub-grain boundaries.