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Scalloping Effect - Silicon

Material Name: Silicon
Record No.: 43
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: The MacEtch mechanism has been established as an attractive alternative to standard plasma-assisted etching approaches. MacEtch provides a low-cost, room-temperature, and vacuum-condition-free substitute to reactive-ion etching (RIE) that is also devoid of the potential for generating undesired ion-beam induced damage, irregular sidewall features, and non-vertical etch profiles. Figure 1 shows a typical example of irregular sidewall features (Scalloping effect) generated from deep RIE, also known as Bosch process.
Reference: SEUNG HYUN KIM, INVERSE METAL-ASSISTED CHEMICAL ETCHING OF INDIUM PHOSPHIDE WITH SUB-20 NM SCALABILITY, MSc Thesis, University of Illinois at Urbana-Champaign, 2014, p. 2.


Figure 1: SEM images of deep trenches generated from Bosch process with a magnified view on the right.