Normal and Bad Etch Results

Material Name: Silicon
Record No.: 45
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: The reason for this excursion was that these two wafers had missed the time window from resist application to exposure. The plasma density detected the problem before the optical endpoint detector did.
Reference: Russell Benson, et al., Technology Improvement and Fault Detection TCP Etch Chamber and a Dual Frequency Oxide Etch Chamber, 8th European AEC/APC Conference, Dresden, Germany, April 18-20, 2007, PowerPoint Presentation, pp. 1-17.


Figure 1: The pictures below show normal (left) and bad (right) etch results.

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