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Dual Damascene Structure - Copper Wafer

Material Name: Copper
Record No.: 52
Primary Chemical Element in Material: Cu
Sample Type: Wafer
Uses: Cleaning
Etchant Name: None
Etching Method: Cleaning
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Tsung-Kuei Kang, and Wei-Yang Chou, Avoiding Cu Hillocks during the Plasma Process, Journal of The Electrochemical Society, 151 (6) G391-G395, 2004.


Figure 1: SEM micrograph of dual damascene structure after postnitride removal cleaning ~using only wet solvent cleaning.