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Image Bilayer

Material Name: Silicon
Record No.: 57
Primary Chemical Element in Material: Wafer
Sample Type: Layer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: To reduce this ripping effect, we used a bilayer lift-off process by MicroChem Corp. Lift-Off Resist (LOR 10B) is a photoresist composed of a 0.002-mm sublayer below another positive resist, S1813, as shown in Fig. 1. This sublayer produced a gap between the metal on the photoresist and that on the wafer, which resulted in clean edges during the lift-off process.
Reference: Ankita Verma, Joshah Jennings, Ryan D. Johnson, Marc H. Weber, and Kelvin G. Lynn, Fabrication of 3D charged particle trap using through-silicon vias etched by deep reactive ion etching, J. Vac. Sci. Technol. B 31, 032001 (2013); doi: 10.1116/1.4799662.


Figure 1: Image bilayer.