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H2 Bubbles

Material Name: Silicon
Record No.: 97
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Secondly, even if defects due to low wettability disappeared, residue does not disappear completely. The reason is a generation of H2 Bubble during the reaction of Si and hydroxide,

As shown in figure 1. H2 bubbles make hillock and increase of roughness by wet etch masking, if it is captured between a narrow space pattern, bubble removal on the surface is more difficult.
Reference: Kihyung Ko, et al., A study on the removal method of Si residue during Si Wet Etch, Abstract #2102, 224th ECS Meeting, 2013 The Electrochemical Society, pp. 1.


Figure 1: Generation image of H2 bubble / Hillock & roughness SEM image by bubble masking.