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Distorted Oxide Hard Mask Patterns

Material Name: Silicon
Record No.: 98
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: The Scanning Electron Microscope (SEM) cross-section shows distorted oxide hard mask patterns and an optical microscope image reveals chipping during deeptrench (DT) structuring.
Reference: Oguz Yavas, Ernst Richter, Christian Kluthe & Markus Sickmoeller, Wafer-edge yield engineering in leading-edge DRAM manufacturing, Semiconductor Fabtech -39th Edition, www.fabtech.org, 2009, pp. 1-5.


Figure 1: SEM image of regular and deformed hard mask (top). Optical image of a wafer without and with chipping (bottom).