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CdTe (111) wafers - Chemical polishing

Material Name: CdTe (111) wafers
Recipe No.: 5994
Primary Chemical Element in Material: Cd
Sample Type: Wafer
Uses: Polishing
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Wet (chemical) polishing
Etchant (Electrolyte) Composition: x...Br2, x...MeOH. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): Temperature: RT.
Note: CdTe (111) wafers grown by the Horizontal Bridgman method, and used for epitaxy growth of CdTe on both (111)A and (111)B oriented surfaces. wafers were mechanically lapped and then polished in a BRM solution prior to epitaxy. Epitaxy growth was by Vapor Transport using a vertical, three-zone furnace under argon with wafers at the bottom. Epitaxy would grow only on the (111)A surface and showed triangular steps with (110) slopes. Note: Argon was used to thermally etch both surfaces while still in the growth system: the (111)A showed terracing; whereas (111)B showed random etching only.
Reference: Kuwamoto, H - J Cryst Growth, 69,204 (1984).