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Wafer Etchants

(Y2O3)m(ZrO2)(1-m) (100) wafers - Chemical polishing
100 etchant - Ge (100) wafers - Wet (chemical) etching
111 etchant - Ge (111) and Si (111) wafers - Chemical polishing/etching
4FeO.2Fe2O3.2Si02.4H2O, (001) cleaved wafers - Dislocation etching
51 etchant - GaAs (111) wafer - Wet (chemical) etching
79Ni-17Fe-44Mo (111) oriented Permalloy wafers - Electrolytic polishing
A/B etchant - GaAs (111) wafers with zinc diffusion - Wet (chemical) etching
A/B etchant - GaSb (100) wafers Te-doped - Wet (chemical) etching
A/B etchant - InP (TTT)B wafers - Wet (chemical) etching
AB etchant, modified - Gallium arsenide
AHA etchant - For GaAs
ASTM dislocation etchant - Dislocation etching
Abraham's AB etchant - - Gallium arsenide
Ag (001) wafers - Chemical polishing
Ag (001) wafers - Dislocation etching
Ag (001) wafers - Electrolytic sawing
Ag (111) and (100) wafers - Chemical polishing
Ag (111) wafers, Ag natural crystals, Ag native single crystals
Ag2Al (0001) wafers - Dislocation etching
Ag2Al (0001) wafers - Dislocation etching
Ag2Se (100) wafers - Chemical polishing
Ag2Se (100) wafers and other orientations - Chemical polishing
Ag2Se (100) wafers and other orientations - Chemical polishing
Ag2Te (100) wafers - Chemical polishing
AgBr (100) and (111) wafers - Dislocation etching
AgBr (110) wafers - Abrasive polishing
AgCl (100) wafers - Chemical cleaning
AgCl (100) wafers - Chemical cleaning
AgCl (100) wafers - Chemical polishing
Agua Regia - Si (111) and (100) wafers - Chemical cleaning
Agua Regia - Te (10T0) cleaved wafers - Chemical polishing/etching
Al (001) wafers - Al (001) wafers and other orientations
Al (001) wafers - Al, (001) wafers used in a study of lithium precipitation along dislocations
Al (001) wafers - Dislocation etching
Al (100) wafer-Al, (100) wafer surfaces preferentially etched in this solution
Al (100) wafers used in an oxidation study - Electrolytic polishing
Al single crystal wafers - Electrolytic thinning
Al2O3 (0001) wafers - Chemical cleaning
Al2O3 (0001) wafers - Wet (chemical) etching
Al2O3 (0001) wafers - Metal etching
AlGaAs (100) wafer - Chemical cleaning
AlSb (111) wafers - Wet (chemical) etching
AlSb wafers - Wet (chemical) etching
AlSb wafers - Wet (chemical) etching
AlSb wafers - Chemical polishing
AlSb wafers - Chemical polishing
AlSb wafers - Chemical polishing
AlSb/GaSb wafers - Wet (chemical) etching
Allen's etchant - InSb (111) wafers - Chemical polishing
Alminium gallium arsenide (Al(x) Ga(1-x) As) - Wet (chemical) etching
Alpha-Al2O3 (0001) wafers - Wet (chemical) etching
Alpha-SiC (0001) wafers - Dislocation etching
Alpha-SiC (0001) wafers - Gas polishing
Alum, KAl(SO4)2 x 12H2O (111) wafers - Wet (chemical) etching
Aluminum etchant type A - VLSI - Wet (chemical) etching
Amine Gallate etching of silicon wafers I - Wet (chemical) etching
Aqua Regia, modified - GaP (111) wafers - Wet (chemical) etching
As (0001) wafers - Solution used as a general removal etch
Au (111) wafers and other orientations - Wet (chemical) etching
Au diffused into silicon - Wet (chemical) etching
Au diffused into silicon wafers - Wet (chemical) etching
BCK-111 etchant - InP (100) wafers - Wet (chemical) etching
BHF etchant - Si (100), p-type, 2 Ohm cm resistivity wafers - Wet (chemical) etching
BHF etchant - Ta (111) and (100) wafers - Wet (chemical) etching
BJ etchant - Ge (111) wafers - Chemical polishing
BPK-221 etchant - InP (100) wafers - Wet (chemical) etching
BRM etchant - InP (100) n-type wafers - Chemical polishing
BRM etchant - p-GaSb (111) wafers - Wet (chemical) etching
BaF2 (111) wafers - Acid, float-off
BaF2 (111) wafers - Chemical polishing
BaF2 (111) wafers - Chemical polishing
BaF3 (111) wafers - Wet (chemical) etching
Barber's etchant - NaCl (100) wafers - Wet (chemical) etching
Be (001), (100), and (110) wafers - Electrolytic polishing
BeO (0001) wafer - Wet (chemical) etching
BeO (0001) wafer - Wet (chemical) etching
BeO (0001) wafer - Wet (chemical) etching
BeO (0001) wafer - Wet (chemical) etching
BeO (0001) wafers and pressed powder substrates - Wet (chemical) etching
Beta-SiC (0001) wafers - Molten flux etching
Bi (0001) wafers - Wet (chemical) etching
Bi (0001) wafers - Chemical polishing
Bi2Se3 (0001) cleaved wafers - Electrolytic, oxidizing
Bi2Se3 (0001) wafers - Chemical cleaning
Bi2Se3 (0001) wafers - Chemical polishing
Bi2Te3 (0001) wafers - Chemical ecthing
Bi2Te3 (0001) wafers - Wet (chemical) etching
Bi2Te3 (0001) wafers - Wet (chemical) etching
Bi2Te3 (0001) wafers - Wet (chemical) etching
CP4 etchant - InSb (111) wafers - Chemical polishing
CP4 etchant - LiF (10O) cleaved wafers - Dislocation etching
CP4 etchant - Si wafers - Wet (chemical) etching
CP4 etchant - Te (0001) cleaved wafers - Wet (chemical) etching
CP4 etchant, modified - InAs (111) wafers used in a polarity study - Wet (chemical) etching
CP4 etchants, dilute CP4, modified - Ge (111), (100), (110), and (211) wafers - Wet (chemical) etching
CP4, variety CP4A etchant - InSb (111) wafers and other orientation - Chemical polishing
CP4A etchant - FeGe2 (100) and (110) wafers - Wet (chemical) etching
CP4A etchant - InSb (111) wafers - Wet (chemical) etching
CP4A etchant - Si (111) wafers and other orientations - Chemical polishing
Ca2B6O11 x 5H2O (010) cleaved wafers- Wet (chemical) etching
CaCO3 (1011) cleaved wafers - Dislocation etching
CaCO3 (10l1) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Acid cleaning
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaCO3 r(1011) cleaved wafers - Dislocation etching
CaF2 (100) cleaved wafers - Cleaning
CaF2 (111) cleaved wafers - Wet (chemical) etching
CaF2 (111) cleaved wafers - Dislocation etching
CaF2 (111) wafers - Wet (chemical) etching
CaW04 (100) wafers - Wet (chemical) etching
CaWO4 (001) wafers - Wet (chemical) etching
CaWO4 (001) wafers - Wet (chemical) etching
CaWO4 (001) wafers - Wet (chemical) etching
Camp No. 2 (Superoxol) etchant - Si (111) n-type wafers and p-doped with 60Co - Wet (chemical) etching
Camp No. 2 (Superoxol, CP2) etchant - Ge (111) wafers - Wet (chemical) etching
Camp No. 3 (CP3) etchant - Ge (111) wafers - Wet (chemical) etching
Camp No. 4 (CP4) etchant - Ge (100) wafers and other orientations - Chemical polishing/etching
Camp No. 8 (CP8) etchant - Si (111) wafers - Wet (chemical) etching
Caro's etch, modified - Si (111) p-type wafers used for diffusion of antimony from glass
Caro's etchant - GaAs (100) n-type wafers grown by LEC as ingots - Wet (chemical) etching
Caro's etchant - Si (111) wafers and other orientations - Chemical cleaning
Caro's etchant, modified - Si (111) wafers used in a study of ion bombardment cleaning - Chemical polishing
CdI2 (0001) wafers - Chemical polishing
CdS (0001) and (1010) wafers - Wet (chemical) etching
CdS (0001) and (1013) wafers - Wet (chemical) etching
CdS (0001) wafer - Wet (chemical) etching
CdS (0001) wafer - Wet (chemical) etching
CdS (0001) wafer - Chemical ething
CdS (0001) wafer - Chemical/mechanical polishing
CdS (0001) wafers - Chemical cleaning
CdS (0001) wafers - Chemical cleaning
CdS (0001) wafers - Wet (chemical) etching
CdS (0001) wafers - Wet (chemical) etching
CdS (0001) wafers - Wet (chemical) etching
CdS (0001) wafers and CdSe (1010) cleaved wafer-Light, reactive
CdS (100) wafer - Chemical polishing
CdS (100) wafers - Wet (chemical) etching
CdS (1010) wafers - Wet (chemical) etching
CdS (1010) wafers - Wet (chemical) etching
CdS (111) wafer - Wet (chemical) etching
CdS (111) wafers - Chemical polishing
CdS (111) wafers - Chemical polishing
CdS wafers copper plated - Wet (chemical) etching
CdSb (100) wafer - Chemical polishing
CdSe (0001) or (1120) wafers - Wet (chemical) etching
CdSe (0001) wafers - Wet (chemical) etching
CdSe (0001) wafers - Wet (chemical) etching
CdSe (0001) wafers - Wet (chemical) etching
CdSe (0001) wafers - Wet (chemical) etching
CdSe (0001), (1010) and (1120) wafers - Wet (chemical) etching
CdSe (0001), (lOlO) and (1120) - Wet (chemical) etching
CdSe (1010) cleaved wafers - Light, reactive
CdSe(120) n-type wafers - Wet (chemical) etching
CdSiAs2 (001) and (111) wafers - Wet (chemical) etching
CdTe (100) wafers - Chemical polishing
CdTe (100), (111), and (110) wafers - Wet (chemical) etching
CdTe (111) - Electrolytic oxidation
CdTe (111) n-type wafers - Chemical polishing
CdTe (111) wafers - Acid, burn
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Wet (chemical) etching
CdTe (111) wafers - Chemical polishing
CdTe (111) wafers - Chemical polishing
CdTe (111) wafers - Chemical polishing
CdTe (111) wafers - Chemical polishing
CdTe (111) wafers - Chemical polishing
CdTe (111) wafers - Chemical polishing
CdTe (111) wafers - Chemical polishing
CdTe (111) wafers - Dislocation etching
CdTe (111) wafers and ingots - Wet (chemical) etching
CdTe (111), (100) and (110) wafers - Wet (chemical) etching
CdTe (111), (100), and (110) wafers - Thermal etching
CdTe thin film - Chemical float-off
Chrome dislocation etchant - Si (100) and (110) wafers - Dislocation etching
Chrome regia etchant - Si wafers both float zone ingot material and epitaxy thin film deposit
Co (0001) wafers- Co (0001) wafers and other orientations used in a structure study
Co (0001) wafers- Electrolytic polishing
Co (0001) wafers- Electrolytic polishing
CoFeO (100) wafers - Wet (chemical) etching
CoO (100) wafers- Wet (chemical) etching
CoO (100) wafers- Gas oxidation
CoO (100) wafers- Thermal processing
CoSi2 (100) wafers - Dislocation etching
Cook's etchant - NaCl (100) wafers - Wet (chemical) etching
Copper etchant - Si (111) wafers and other orientations - Wet (chemical) etching
Cr2O3 (0001) and (1011) wafers- Wet (chemical) etching
Cr2O3 (0001) wafers- Wet (chemical) etching
Cs2O (111) wafers - Chemical cleaning
CsI (100) oriented single crystal wafers - Chemical polishing/etching
Cu (100) wafers - Chemical polishing
Cu (111) wafers - Gas cleaning
Cu (111) wafers- Wet (chemical) etching
Cu (111) within 2-3? orientation - Dislocation etching
Cu single crystal wafers - Dislocation etching
Cu single crystal wafers of various orientations - Dislocation etching
CuInS2 (112) wafers - Dislocation etching
CuInS2 (112) wafers - Dislocation etching
CuInS2 (112) wafers - Dislocation etching
CuInS2 n-type wafers - Chemical polishing
CuInS2 n-type wafers - Photo etch-polishing
CuInS2 wafer - Chemical polishing
CuInS2 wafers - Wet (chemical) etching
CuInSe2 p-type wafers - Chemical cleaning
CuInSe2 wafers - Wet (chemical) etching
D (100), (111), and (110) oriented wafers - Physical etching
D (111) wafers - Chemical cleaning
D (111) wafers - Ionized gas
D (111) wafers - Metal, implatantion
Dash's copper decoration etchant - Si (111) wafers - Metal difusion
Dash's etchant, modified - Si (100), (111), (110) and (112) wafers
Dash's etchant, modified - Si (111) wafers - Wet (chemical) etching
E etchant - Zn (0001) wafers - Wet (chemical) etching
EAg1 etchant - CdTe (100), (111) and (110) wafers - Wet (chemical) etching
EAg2 etchant - CdTe (100), (111), and (110) wafers - Wet (chemical) etching
EDP etching of silicon wafers I - Wet (chemical) etching
EDP etching of silicon wafers II - Wet (chemical) etching
EDTA etchant - CaCO3 r(1011) cleaved wafers - Acid cleaning
EPW etchant - Si (111) and (100), p-type 1 - 10 Ohm cm and n-type wafers - Wet (chemical) etching
Erhard's etchant - Si (111) wafers - Dislocation etching
Etchant No. 2 - InSb (100) and (110) wafers - Wet (chemical) etching
Fe (100) wafers - Wet (chemical) etching
Fe (100) wafers - Dislocation etching
Fe (100) wafers and other orientations - Wet (chemical) etching
Fe (100) wafers used in a magnetics study - Wet (chemical) etching
FeGe2 (100) and (110) wafers - Wet (chemical) etching
Ga (100) wafers - Chemical cleaning
Ga-As-P alloy (GaAsP) - Chemical polishing and etching
Ga-As-P specimens - (111) faces etched as cleaved - Dislocation etch in Abraham's AB etch
Ga-As-P specimens - GaAs(1-y)P(x), 0.6 >x<1
Ga-As-P system - Dislocation etching for (111)A -(111)B faces
Ga-As-P-Sb specimens - GaAs(x)Sb(y)P(1-x-y)
Ga-In-As phosphide - Chemical polishing
Ga-In-As phosphide - Chemical polishing
Ga-In-As phosphide - Chemical polishing
Ga-In-As phosphide - Etching for pit etch
Ga-In-As phosphide - In a study of etching characteristics of InGaAsP/InP wafers
Ga-In-As phosphide - Selective etching for GaInAsP against InP
Ga2O3 and Ga(OH)3 on GaAs, (100), p-type wafers - Wet (chemical) etching
Ga2O3 as a native oxide on gallium arsenide wafers - Chemical cleaning
GaAs (100) Si-doped wafers - Chemical cleaning
GaAs (100) Si-doped wafers - Wet (chemical) etching
GaAs (100) Te-doped wafer - Chemical cleaning
GaAs (100) Te-doped wafers - Wet (chemical) etching
GaAs (100) Zn-doped wafer - Chemical cleaning
GaAs (100) Zn-doped, p-type wafers - Wet (chemical) etching
GaAs (100) and (111) wafers - Chemical cleaning
GaAs (100) and (111) wafers - Chemical cleaning
GaAs (100) and (111) wafers - Wet (chemical) etching
GaAs (100) and (111) wafers - Acid oxide removal
GaAs (100) and (111) wafers doped with Se, Te, Zn, and Pd - Dislocation etching
GaAs (100) and GaAs (111) wafers - Electrolytic oxidation
GaAs (100) and InSb (100) wafers - Etch cleaning
GaAs (100) ingot and wafers - Dislocation etching
GaAs (100) n+ wafers - Wet (chemical) etching
GaAs (100) n-type wafers - Chemical cleaning
GaAs (100) n-type wafers - Wet (chemical) etching - /polishing/cleaning
GaAs (100) n-type wafers - Wet (chemical) etching
GaAs (100) n-type wafers - Wet (chemical) etching
GaAs (100) n-type wafers - Wet (chemical) etching
GaAs (100) n-type wafers - Chemical polishing
GaAs (100) n-type, 0.001-0.04 Ohm cm resistivity wafers - Chemical thinning
GaAs (100) n/n +, Si-doped wafers - Chemical cleaning
GaAs (100) p-type wafers - Chemical cleaning
GaAs (100) p-type wafers - Wet (chemical) etching
GaAs (100) undoped wafers - GaAs (100) undoped wafers
GaAs (100) wafer Zn-doped - Wet (chemical) etching
GaAs (100) wafer substrates - Chemical thinning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Chemical cleaning
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing
GaAs (100) wafers - Chemical polishing/cleaning
GaAs (100) wafers - Chemical thinning
GaAs (100) wafers - Dislocation etching
GaAs (100) wafers - Dislocation etching
GaAs (100) wafers - Electrolytic, oxidation
GaAs (100) wafers - Cemical thinning
GaAs (100) wafers - Wet (chemical) etching
GaAs (100) wafers - Ionized gas
GaAs (100) wafers - Lift-off
GaAs (100) wafers - Metal, replication
GaAs (100) wafers - Physical thinning
GaAs (100) wafers Be diffused - Wet (chemical) etching
GaAs (100) wafers Cut 2?-off plane toward (110) - Chemical cleaning
GaAs (100) wafers and other low index planes - Chemical thinning
GaAs (100) wafers and other orientations - Wet (chemical) etching
GaAs (100) wafers and other orientations - Wet (chemical) etching
GaAs (100) wafers and other orientations - Dislocation etching
GaAs (100) wafers as substrates - Wet (chemical) etching
GaAs (100) wafers cut within 2-3? of plane - Chemical polishing
GaAs (100) wafers cut within ?/2? of plane, Te-doped - Wet (chemical) etching
GaAs (100) wafers doped with germanium - Wet (chemical) etching
GaAs (100) wafers fabricated as Schottky barrier diodes - Chemical thinning
GaAs (100) wafers fabricated as diodes - Electrolytic polishing
GaAs (100) wafers ion implanted with Si, Zn, and Be - Chemical thinning
GaAs (100) wafers ion implanted with zinc - Wet (chemical) etching
GaAs (100) wafers used as substrates for Gunn diode - Wet (chemical) etching
GaAs (100) wafers used as substrates for LPE growth of GaAlAs - Wet (chemical) etching
GaAs (100) wafers used as substrates for MBE deposition of AlGaAs - Chemical cleaning
GaAs (100) wafers used as substrates for OMVPE growth of GaInAs and GaInP layers - Dislocation etching
GaAs (100) wafers used as substrates for deposition of AlN - Chemical cleaning
GaAs (100) wafers used for epitaxy growth of InGaAs - Chemical cleaning
GaAs (100) wafers used for zinc diffusion at 85O?C - Chemical polishing
GaAs (100) wafers used in a study of zinc diffusion - Chemical polishing
GaAs (100) wafers used in a study of zinc diffusion at 850?C - Chemical polishing
GaAs (100) wafers used to fabricate Schottky barrier diodes - Chemical polishing
GaAs (100) wafers with epitaxy grown heterostructure - Wet (chemical) etching
GaAs (100) wafers zinc diffused - Wet (chemical) etching
GaAs (100) wafers zinc diffused - Wet (chemical) etching
GaAs (100) wafers, Zn diffused - Wet (chemical) etching
GaAs (100), (111) and (110) wafers - Wet (chemical) etching
GaAs (100), (111) and (110) wafers - Wet (chemical) etching
GaAs (100), (111) and (110) wafers - Wet (chemical) etching
GaAs (100), (111), (110), (211) wafers - Wet (chemical) etching
GaAs (100), Te-doped, n-type wafers - Chemical cleaning
GaAs (100), and InP, (100) wafers - Chemical thinning
GaAs (100), n-type wafers - Chemical cleaning
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), n-type wafers - Wet (chemical) etching
GaAs (100), wafers, Si or Be doped wafers - Chemical cleaning
GaAs (110) wafers were cleaved under UHV - Vacuum cleaning
GaAs (110), (111), (100) wafers - Chemical polishing
GaAs (110), (111), and (211) wafers - Wet (chemical) etching
GaAs (111) and (100) wafers - Wet (chemical) etching
GaAs (111) and (100) wafers - Wet (chemical) etching
GaAs (111) and (100) wafers - Chemical polishing
GaAs (111) and (100) wafers - Chemical polishing
GaAs (111) as single crystal wafers and spheres - Wet (chemical) etching
GaAs (111) n-type and undoped material - Chemical polishing
GaAs (111) wafers - Chemical cleaning
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Wet (chemical) etching
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers - Chemical polishing
GaAs (111) wafers Cr, Te, and Zn doped - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Wet (chemical) etching
GaAs (111) wafers and spheres - Chemical polishing
GaAs (111) wafers fabricated as Esaki diodes - Chemical polishing
GaAs (111) wafers used as substrates for epitaxy growth of Ge and ZnSe - Wet (chemical) etching
GaAs (111) wafers used in a polarity etching study - Wet (chemical) etching
GaAs (111) wafers used in a polarity study - Wet (chemical) etching
GaAs (111) wafers used in a polarity study - Wet (chemical) etching
GaAs (111) wafers used in a polarity study - Wet (chemical) etching
GaAs (111) wafers used in a polarity study of III-V compound semiconductors - Wet (chemical) etching
GaAs (111) wafers used in an etch development study - Wet (chemical) etching
GaAs (111) wafers used in an etch development study - Wet (chemical) etching
GaAs (111) wafers used in an etch development study - Wet (chemical) etching
GaAs (111) wafers with (111) Ga surface polished - Chemical polishing
GaAs (111), (100) and (110) wafers - Dislocation etching
GaAs (111), (100), and (110) wafers - Wet (chemical) etching
GaAs (111), n-type, 5-30 Ohm cm resistivity wafers - Wet (chemical) etching
GaAs (111), n-type, 5-30 Ohm cm resistivity wafers - Chemical polishing
GaAs (111)A and (TTT)B wafers - Chemical polishing
GaAs (111)A wafer - Wet (chemical) etching
GaAs (111)A wafer surfaces - Wet (chemical) etching
GaAs (111)As, (100) and (110) oriented wafers - Chemical cleaning
GaAs (111)B and (100) both n-type and undoped wafers - Wet (chemical) etching
GaAs (1OO), n-type wafers - Wet (chemical) etching
GaAs and GaP (100) and (111)B high n-type wafers - Chemical polishing
GaAs and Si (100) wafers - Wet (chemical) etching
GaAs grown as a (111) ingot - Wet (chemical) etching
GaAs single crystal sphere - Wet (chemical) etching
GaAs specimens cut as cylinders and hemispheres - Wet (chemical) etching
GaAs wafers - Wet (chemical) etching
GaAs wafers - Wet (chemical) etching
GaAs wafers - Wet (chemical) etching
GaAs wafers - Wet (chemical) etching
GaAs wafers - Wet (chemical) etching
GaAs wafers - Wet (chemical) etching
GaAs wafers - Wet (chemical) etching
GaAs wafers - Chemical polishing
GaAs wafers - Chemical polishing
GaAs wafers grown by orizontal Bridgman (HB) technique - Wet (chemical) etching
GaAs wafers of various orientations - Chemical polishing
GaAs, (100) wafers - Chemical cleaning
GaAsB (111) n-type wafers and (100) undoped wafers - Wet (chemical) etching
GaAsBe (100) p-type wafers - Metal passivation
GaAsBe (110) p-type wafers - Chemical cleaning
GaAsCR (100)(SI) wafers - Chemical polishing/cleaning
GaAsCr (100) (SI) or n+ diffused wafers - Wet (chemical) etching
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning
GaAsCr (100) (SI) wafers - Chemical cleaning/etching
GaAsCr (100) (SI) wafers - Wet (chemical) etching
GaAsCr (100) (SI) wafers - Wet (chemical) etching - /polishing
GaAsCr (100) (SI) wafers - Wet (chemical) etching
GaAsCr (100) (SI) wafers - Wet (chemical) etching
GaAsCr (100) (SI) wafers - Wet (chemical) etching
GaAsCr (100) (SI) wafers - Chemical polishing
GaAsCr (100) (SI) wafers - Chemical polishing
GaAsCr (100) (SI) wafers - Chemical polishing
GaAsCr (100) (SI) wafers - Chemical polishing/etching
GaAsCr (100) (SI) wafers - Etch cleaning
GaAsCr (100) (SI) wafers - Oxidation/cleaning
GaAsCr (100) (SI) wafers used as substrates for GaAs growth by MBE - Chemical cleaning
GaAsCr (100) (SI) wafers used as substrates-Oxide removal
GaAsCr (100) (SI) wafers used in a study of surface cleaning - Chemical polishing/cleaning
GaAsCr (100) wafers - Chemical cleaning
GaAsCr (100) wafers within 1/2 degrees of plane - Wet (chemical) etching
GaAsCr (100), (111) (SI) and n-type Si doped wafers - Molten flux
GaAsCr, (100) (SI) and InPFe (100) (SI) wafers - Molten flux
GaAsCr, (100) (SI) wafers - Halogen, polish
GaAsTe (100) n-type wafer substrates - Chemical cleaning
GaAs; Zn, (100) wafers cut 2-3?-off plane toward (110) - Chemical polishing
GaAsP wafers as highly p-type doped with Mn - Dislocation etching
GaOxNy surface contamination of gallium arsenide wafers - Wet (chemical) etching
GaP (100) and (111) wafers - Chemical polishing
GaP (100) and (111) wafers - Gas polishing
GaP (100) and (111)B, p-type, 0.2 Ohm cm resistivity wafers - Chemical polishing
GaP (100) n-type wafers - Chemical polishing
GaP (100) wafers - Wet (chemical) etching
GaP (100), (111)A and (111)B wafers - Chemical polishing
GaP (110) undoped wafers - Chemical polishing
GaP (111) and (100) wafers - Chemical polishing
GaP (111) and GaAs (111) wafers - Chemical polishing
GaP (111) and GaAs (111) wafers - Chemical polishing
GaP (111) and GaAs (111)A wafers - Chemical polishing
GaP (111) wafer - Chemical polishing
GaP (111) wafers - Wet (chemical) etching
GaP (111) wafers - Wet (chemical) etching
GaP (111) wafers - Wet (chemical) etching
GaP (111) wafers - Wet (chemical) etching
GaP (111) wafers - Metal decoration
GaP (111) wafers zinc diffused - Wet (chemical) etching
GaP (111), (100), (110) wafers - Chemical polishing
GaP (111)B wafers - Wet (chemical) etching
GaS (100), n-type wafers - Chemical polishing
GaSb (100) both undoped and Te-doped wafers - Acid passivating
GaSb (100) both undoped and Te-doped wafers - Acid passivation
GaSb (100) undoped and Te-doped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) undoped wafers - Chemical polishing
GaSb (100) wafers - Wet (chemical) etching
GaSb (100) wafers - Chemical polishing
GaSb (100) wafers - Chemical, oxide removal
GaSb (100), p-type wafers - Wet (chemical) etching
GaSb (111) and (100) wafers - Wet (chemical) etching
GaSb (111) and (100) wafers - Wet (chemical) etching
GaSb (111) and (100) wafers - Wet (chemical) etching
GaSb (111) and (100) wafers - Wet (chemical) etching
GaSb (111) and (100) wafers - Wet (chemical) etching
GaSb (111) and (100) wafers - Chemical polishing
GaSb (111) wafers - Wet (chemical) etching
GaSb (111) wafers - Wet (chemical) etching
GaSb (111) wafers - Wet (chemical) etching
GaSb (111) wafers - Wet (chemical) etching
GaSb (111) wafers - Wet (chemical) etching
GaSb (211) wafer - Wet (chemical) etching
GaSe (0001) wafers - Mechanical, dislocation
Gallium arsenide (GaAs polycrystalline) - Wet (chemical) etching
Gallium arsenide (GaAs) - Germanium junction - Wet (chemical) etching
Gallium arsenide (GaAs) - A study of the etching characteristics
Gallium arsenide (GaAs) - Chemical and electrolytic polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Etch for selective removal
Gallium arsenide (GaAs) - Etch pits on (111) face
Gallium arsenide (GaAs) - Etching for etch pitch
Gallium arsenide (GaAs) - Etching for etch pitch
Gallium arsenide (GaAs) - For (001) face
Gallium arsenide (GaAs) - For (001) face - Anodic etch for dislocations
Gallium arsenide (GaAs) - For differentiation from InAs stain in sodium hypochloridesoln
Gallium arsenide (GaAs) - For etch pits etching
Gallium arsenide (GaAs) - For pitch etching
Gallium arsenide (GaAs) - Polishing and Wet (chemical) etching
Gallium arsenide (GaAs) - Removing the surface damage
Gallium arsenide (GaAs) - Selective etch for dislocations on (111) plane
Gallium arsenide (GaAs) - The p-n junction
Gallium arsenide (GaAs) - To distingish p-n junction
Gallium arsenide (GaAs) - To distinguish between (111) Ga - (111)
Gallium arsenide (GaAs) - Wet (chemical) etching
Gallium arsenide (GaAs) - Wet (chemical) etching
Gallium arsenide (GaAs) - Wet (chemical) etching
Gallium arsenide (GaAs) - Chemical polishing
Gallium arsenide (GaAs) - Electrolytic etching
Gd3Ga5O12 (0001) wafers 3" in diameter - Ketone cleaning
Gd3Ga5O12 (110) wafers - Abrasive polishing
Gd3Ga5O12 (111) cut wafers - Chemical cleaning
Gd3Ga5O12 (111) wafers - Abrasive polishing
Gd3Se1.8Ga3.2O12 (0001) wafers - Chemical cleaning
Ge (100) and (110) wafers - Wet (chemical) etching
Ge (100) and (111) wafers - Metal etching
Ge (100) wafers - Vacuum cleaning
Ge (100) wafers cut within 1? of plane - Physical cleaning
Ge (111) 5-10 Ohm cm resistivity n-type wafers - Wet (chemical) etching
Ge (111) and (100) wafers - Wet (chemical) etching
Ge (111) and (100) wafers - Solution used as a preferential etch
Ge (111) and (100) wafers used as substrates - Chemical polishing
Ge (111) n-type wafers - Wet (chemical) etching
Ge (111) n-type wafers - Electrolytic etching
Ge (111) n-type, 0.004-40 Ohm cm resistivity wafers - Electrolytic polishing
Ge (111) wafer and spherical shot - Wet (chemical) etching
Ge (111) wafer with p-n junctions - Electrolytic etching
Ge (111) wafers - Chemical cleaning
Ge (111) wafers - Chemical cleaning
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Wet (chemical) etching
Ge (111) wafers - Chemical polishing
Ge (111) wafers - Chemical polishing
Ge (111) wafers - Chemical polishing
Ge (111) wafers - Chemical polishing
Ge (111) wafers - Chemical polishing
Ge (111) wafers - Chemical polishing
Ge (111) wafers - Electrolytic etching
Ge (111) wafers - Electrolytic etching
Ge (111) wafers - Electrolytic etching
Ge (111) wafers - Electrolytic etching
Ge (111) wafers - Electrolytic etching
Ge (111) wafers - Electrolytic polishing
Ge (111) wafers - Electrolytic polishing
Ge (111) wafers - Electrolytic polishing
Ge (111) wafers - Electrolytic polishing
Ge (111) wafers - Electrolytic polishing
Ge (111) wafers - Electrolytic polishing
Ge (111) wafers - Electrolytic plating
Ge (111) wafers - Abrasive, damage
Ge (111) wafers - Acid, stress
Ge (111) wafers - Cleave
Ge (111) wafers - Junction testing
Ge (111) wafers - Metal, structure
Ge (111) wafers and cylinders - Metal diffusion
Ge (111) wafers and ingots - Wet (chemical) etching
Ge (111) wafers and other orientations - Wet (chemical) etching
Ge (111) wafers and other orientations - Wet (chemical) etching
Ge (111) wafers and other orientations - Wet (chemical) etching
Ge (111) wafers and other orientations - Electrolytic etching
Ge (111) wafers and other orientations - Gas oxidation
Ge (111) wafers angle lapped at 5?43' - Wet (chemical) etching
Ge (111) wafers fabricated as p-n junction diodes - Wet (chemical) etching
Ge (111) wafers fabricated with indium p-n junctions - Junction testing
Ge (111) wafers p-type - Chemical polishing
Ge (111) wafers used as substrates for Ge epitaxy growth - Wet (chemical) etching
Ge (111) wafers with epitaxy grown Ge layers - Gas ecthing
Ge (111) wafers with indium - Metal decoration
Ge (111) wafers with lithium diffused p-n junctions - Wet (chemical) etching
Ge (111) wafers, p-type, 4 Ohm cm resistivity - Chemical polishing
Ge (111), (100), (110) and (211) wafers - Wet (chemical) etching
Ge (111), (100), (110) and (211) wafers - Wet (chemical) etching
Ge (111), (100), (110) and (211) wafers - Wet (chemical) etching
Ge (111), (100), (110), and (211) wafers - Wet (chemical) etching
Ge (111), (100), (110), and (211) wafers - Wet (chemical) etching
Ge (111), (100), and (110) wafers - Chemical polishing
Ge (111), (110) and (100) wafers - Wet (chemical) etching
Ge (111), (110), (100), (211) wafers and single crystal spheres - Wet (chemical) etching
Ge (111), (110), (100), (211) wafers and single crystal spheres - Wet (chemical) etching
Ge (111), (110), and (211) wafers - Wet (chemical) etching
Ge (111), p- and n-type wafers - Electrolytic polishing
Ge and InP (100) and (111) wafers - Chemical thinning
Ge and Si wafers - Chemical polishing
Ge and Si wafers - Electrolytic oxidation
Ge and Si wafers - Ionized gas cleaning
Ge n-type wafers - Chemical polishing
Ge specimens - Electrolytic etching
Ge wafers - Wet (chemical) etching
Ge wafers - Wet (chemical) etching
Ge wafers - Wet (chemical) etching
Ge wafers - Wet (chemical) etching
Ge wafers - Chemical polishing
Ge wafers - Chemical polishing/etching
Ge wafers - Chemical thinning
Ge wafers - Metal, contamination
Ge wafers doped with copper - Chemical polishing
Ge wafers of different orientations - Chemical cleaning
Ge wafers studied for neutron irradiation effects
Ge wafers used as substrates - Chemical polishing
GeAs (111) wafer - Wet (chemical) etching
GeAs (111) wafers - Wet (chemical) etching
GeAs (111) wafers - Wet (chemical) etching
GeAs (111) wafers - Wet (chemical) etching
GeAs (111) wafers - Wet (chemical) etching
Gold etchant for silicon - Si wafers containing alloyed or diffused junctions - Wet (chemical) etching
Healy's junction etchant - Si (111) n-type wafers - Acid, junction etcthing
Hf single crystal wafers and HfN thin films - Chemical cleaning
Hg(1-x)Cd(x)Te (111) wafers - Wet (chemical) etching
HgCdTe (111) wafers - Chemical polishing
HgCdTe (111) wafers and other orientations - Chemical polishing
HgCdTe single crystal wafers - Chemical polishing
HgCdTe wafers - Wet (chemical) etching
HgSe (111) wafers - Wet (chemical) etching
HgSe (111) wafers - Wet (chemical) etching
HgSe (111) wafers - Chemical polishing
HgTe (111) wafers - Wet (chemical) etching
HgTe (111) wafers - Dislocation etching
HgTe single crystal wafers - Chemical polishing
In (100) wafers - Wet (chemical) etching
In preform sheet alloyed on germanium (111) wafer - Wet (chemical) etching
In-Ga-As system - Preferential etch to delineate from Gallium arsenide
In-Ga-As system - Preferential etch to delineate from indium phosphide
InAs (111) wafers - Wet (chemical) etching
InAs (111) wafers - Wet (chemical) etching
InAs (111) wafers - Wet (chemical) etching
InAs (111) wafers - Wet (chemical) etching
InAs (111) wafers and other orientations - Thermal processing
InGaAs (100) wafer - Chemical cleaning
InP (100) Sn doped wafers - Wet (chemical) etching
InP (100) Zn doped p-type wafers - Wet (chemical) etching
InP (100) cleaved wafers - Wet (chemical) etching
InP (100) n-type wafers - Chemical cleaning
InP (100) n-type wafers - Wet (chemical) etching
InP (100) n-type wafers - Wet (chemical) etching
InP (100) n-type wafers - Wet (chemical) etching
InP (100) n-type wafers - Chemical native oxide removal
InP (100) n-type wafers - Chemical polishing
InP (100) p-type wafers - Wet (chemical) etching
InP (100) tin-doped, n-type wafer - Wet (chemical) etching
InP (100) wafer - Wet (chemical) etching
InP (100) wafer - Wet (chemical) etching
InP (100) wafer fabricated as Schottky diodes - Chemical polishing
InP (100) wafer substrates - Halogen, grooving
InP (100) wafer used as a substrate - Acid oxidation
InP (100) wafers - Chemical cleaning
InP (100) wafers - Wet (chemical) etching - A/B etchant, modified
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Wet (chemical) etching
InP (100) wafers - Chemical polishing
InP (100) wafers - Chemical polishing
InP (100) wafers - Chemical polishing
InP (100) wafers - Chemical polishing/etching
InP (100) wafers - Chemical thinning
InP (100) wafers - Electrolytic etching
InP (100) wafers - Electrolytic etching
InP (100) wafers - Electrolytic oxidizing
InP (100) wafers - Acid, stain
InP (100) wafers - Ionized gas
InP (100) wafers - Ionized gas, removal
InP (100) wafers - Physical etrching
InP (100) wafers - Thermal cleaning
InP (100) wafers Cut 3?-off toward (110) - Chemical polishing
InP (100) wafers cut within 1? of plane - Chemical polishing
InP (100) wafers fabricated as Schottky diodes - Junction stain
InP (100) wafers used as substrates - Wet (chemical) etching
InP (100) wafers used as substrates for InP epitaxy - Wet (chemical) etching
InP (100) wafers used as substrates for LPE deposition of InGaAsP - Wet (chemical) etching
InP (100) wafers used as substrates for LPE of InGaAsP - Wet (chemical) etching
InP (100) wafers used for epitaxy growth of InGaAs/InGaAsP - Metal, etch-back
InP (100) wafers used for zinc deposition and anneal - Chemical thinning
InP (100) wafers used in a dislocation study - Dislocation etching
InP (100) wafers with channels in (011) and (011) directions - Wet (chemical) etching
InP (100) wafers with or without thin film InGaAsP epitaxy - Wet (chemical) etching
InP (100) wafers, S doped n-type - Ionized gas cleaning
InP (100) wafers, Zn doped p-type - Wet (chemical) etching
InP (100), n-type, 0.3-0.4 Ohm cm resistivity, and p-type, 7-8 Ohm cm wafers - Chemical cleaning
InP (110) wafer cleaved under UHV - Chemical polishing
InP (111) wafers - Wet (chemical) etching
InP (111) wafers - Wet (chemical) etching
InP (111) wafers - Wet (chemical) etching
InP (111) wafers - Wet (chemical) etching
InP (111) wafers - Chemical polishing
InP (111) wafers grown by LEC - Wet (chemical) etching
InP (111) wafers grown by LEC - Chemical polishing
InP (111)A and (100) wafers - Wet (chemical) etching
InP p-type single crystal wafers - Chemical polishing
InP-Fe (100) (SI) wafers - Chemical polishing
InP-Fe (100) wafers - Chemical cleaning
InPFe (100) (SI) wafers - Wet (chemical) etching
InPFe (100) (SI) wafers - Wet (chemical) etching
InPFe (100) (SI) wafers - Wet (chemical) etching
InPFe (100) (SI) wafers - Chemical polishing
InPFe (100) n-type wafers - InPFe (100) n-type wafers
InPFe (100) wafers - Chemical cleaning
InPFe (100) wafers used as substrates for MISFETT and EMISFET device fabrication - Wet (chemical) etching
InPFe (100) wafers within 5? of plane - Wet (chemical) etching
InPZn epitaxy film grown by LPE - Wet (chemical) etching
InS (100) and (110) wafers - Chemical polishing
InSb (001) wafers - Alcohol cleaning
InSb (100) and (110) wafers - Wet (chemical) etching - Etchant No. 1
InSb (100) n-type wafers - Wet (chemical) etching
InSb (100) n-type wafers used in a study of adsorption coefficients
InSb (100) n-type wafers zinc diffused - Chemical cleaning
InSb (100) wafers - Wet (chemical) etching
InSb (100) wafers - Chemical polishing
InSb (100) wafers - Chemical polishing
InSb (100) wafers - Chemical polishing
InSb (100) wafers - Chemical polishing
InSb (100) wafers - Ionized gas cleaning
InSb (100) wafers - Oxide removal
InSb (100) wafers and other orientations - Chemical polishing
InSb (110) n-type and (100) p-type wafers - Chemical polishing
InSb (111) p-type wafers - Chemical polishing
InSb (111) wafers - Wet (chemical) etching - /polishing
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Wet (chemical) etching
InSb (111) wafers - Chemical polishing
InSb (111) wafers - Chemical polishing
InSb (111) wafers - Chemical polishing
InSb (111) wafers - Chemical polishing
InSb (111) wafers - Chemical polishing
InSb (111) wafers - Chemical polishing
InSb (111) wafers - Chemical polishing
InSb (111) wafers - Electrolytic anodization
InSb (111) wafers - Thermal etching
InSb (111)A, (TTT)B and (100) wafers - Chemical cleaning
InSb (311) and (110) wafers - Electrolytic polishing
InSb (311) wafers - Wet (chemical) etching
InSb (311) wafers - Chemical polishing
InSb-Te (111) n-type wafers - Chemical cleaning
InSe (0001) as hand cleaved wafers - Wet (chemical) etching
Insb (111) wafers - Wet (chemical) etching
Iodate etchant- PbTe (100) wafers - Wet (chemical) etching
Iodine A etchant - Ba2TiO3 (111) and (100) wafers, single crystals - Wet (chemical) etching
Iodine etchant - Si (111) wafers, boron doped - Wet (chemical) etching
Isotropic silicon etches of wafers - Wet (chemical) etching
KBr (001) wafers - Wet (chemical) etching
KBr (100) cleaved wafers - Wet (chemical) etching
KBr (100) wafers and single crystals - Water polishing
KCl (001) cleaved wafers - Wet (chemical) etching
KCl (100) cleaved wafers - Wet (chemical) etching
KCl (100) cleaved wafers - Chemical polishing
KCl (100) cleaved wafers - Gas etching
KCl (100) wafers - Wet (chemical) etching
KCl (100) wafers - Alcohol cleaning
KCl (111) and (100) cleaved wafers - Chemical cleaning
KCl formed as dendritic structure - Acid, defect
KI (100) cleaved wafers - Wet (chemical) etching
KI (100) cleaved wafers - Wet (chemical) etching
KI (100) wafers - Wet (chemical) etching
KI (100) wafers - Alcohol polishing
KKI etchant - InP (100) wafers - Wet (chemical) etching
KOH etching of silicon wafers I - Wet (chemical) etching
KOH etching of silicon wafers II - Wet (chemical) etching
LaBr3 (100) wafers - Chemical polishing
Landyren's etchant - Si (111) wafers and other orientations - Wet (chemical) etching
LiBr (100) cleaved wafers - Wet (chemical) etching
LiCl cleaved wafers - Wet (chemical) etching
LiCl wafers - Dislocation etching
LiF (100) and (111) wafers - Wet (chemical) etching
LiF (100) cleaved wafers - Dislocation etching
LiF (100) wafers - Wet (chemical) etching
LiF (100) wafers - Wet (chemical) etching
LiF (100) wafers - Wet (chemical) etching
LiF (111) cleaved wafers - Ulrasonic vibration
Mg (0001) wafers - Electrolytic polishing/etching
Mg2G3 (111) wafers - Chemical polishing
Mg2Ge (111) cleaved wafers - Wet (chemical) etching
Mg2Ge (111) cleaved wafers - Cleave, cleaning
Mg2Ge (111) wafers - Chemical cleaning
Mg2Ge (111) wafers - Chemical cleaning
Mg2Ge (111) wafers - Chemical polishing
Mg2Si (111) cleaved wafers - Wet (chemical) etching
Mg2Sn (100) cleaved wafers
MgAl2O4 (spinel) (100) and (111) wafers - Chemical polishing
MgAl2O4 (spinel) (111) wafers - Chemical cleaning
MgF2 (100) wafers - Chemical polishing/etching
MgO (100) cleaved wafers - Wet (chemical) etching
MgO (100) cleaved wafers - Wet (chemical) etching
MgO (100) wafers - Chemical cleaning
MgO (100) wafers - Chemical cleaning
MgO (100) wafers - Wet (chemical) etching
MgO (100) wafers - Chemical polishing
MgO (100) wafers - Chemical thinning
MgO (100) wafers - Dislocation etching
MgO (100) wafers - Metal decoration
Mo (100) specimens - Chemical polishing
Mo (111) wafers - Chemical cleaning
Mo (111) wafers - Chemical cleaning
Mo (111) wafers - Electrolytic polishing/thinning
NaCl (100) cleaved wafers - Wet (chemical) etching
NaCl (100) cleaved wafers - Chemical polishing
NaCl (100) cleaved wafers - Chemical polishing
NaCl (100) cleaved wafers - Chemical polishing
NaCl (100) cleaved wafers - Dislocation etching
NaCl (100) cleaved wafers - Dislocation etching
NaCl (100) cleaved wafers - Dislocation etching
NaCl (100) cleaved wafers - Thermal etching
NaCl (100) cleaved wafers - Thermal, float-off
NaCl (100) wafers
NaCl (100) wafers - Chemical cleaning
NaCl (100) wafers - Chemical cleaning
NaCl (100) wafers - Wet (chemical) etching
NaCl (100) wafers - Wet (chemical) etching
NaCl (100) wafers - Wet (chemical) etching
NaCl (100) wafers - Wet (chemical) etching
NaCl (100) wafers - Chemical polishing
NaCl (100) wafers - Chemical polishing
NaCl (100) wafers - Dislocation etching
NaCl (100) wafers - Acid, float-off
NaCl (100) wafers - Gas cleaning
NaCl (100) wafers - Metal decoration
NaCl (100) wafers and single crystals - Chemical polishing
NaKC4H4O6 x 4H2O (0001) wafers - Chemical cleaning
NaKC4H4O6 x 4H2O (0001) wafers - Wet (chemical) etching
Ni (100) wafers - Wet (chemical) etching
Ni (100) wafers - Ionized gas cleaning
NiCu (5%) to NiCu (80%) single crystal wafers - Wet (chemical) etching
NiO (100) cleaved wafers - Thermal etching
P-1 etchant - Zn (0001) wafers - Wet (chemical) etching
P-2 etchant - Zn (0001) wafers and cylinders - Wet (chemical) etching
P-3 etchant - Zn (0001) wafers and cylinders - Wet (chemical) etching
P-ED (EPW) etchant - Si (100) wafers within +/-1? of the plane - Wet (chemical) etching
PBr etchant - CdTe (111), (100), and (110) wafers - Wet (chemical) etching
Pb (100) wafers - Chemical cleaning
Pb (100) wafers - Wet (chemical) etching
Pb (100) wafers - Chemical polishing
Pb (100) wafers - Electrolytic polishing
PbS (100) cleaved wafers - Chemical cleaning
PbS (100) wafers - Chemical polishing
PbS (100) wafers - Chemical polishing/etching
PbS (100) wafers - Dislocation etching
PbS (100) wafers - Electrolytic polishing
PbSe (100) cleaved wafers - Chemical cleaning
PbSe (100) wafers - Eelectrolytic polishing/thinning
PbSe (100) wafers and other orientations - Wet (chemical) etching
PbSe (100) wafers and other orientations - Chemical polishing
PbSe (100) wafers and other orientations - Electrolytic polishing
PbSnSe (100) wafers - Electrolytic polishing
PbSnTe (100) wafers - Wet (chemical) etching
PbSnTe (100) wafers - Chemical polishing
PbSnTe (100) wafers - Chemical polishing/etching
PbSnTe (100) wafers - Electrolytic polishing
PbTe (100) and PbSnTe (100) wafers - Electrolytic polishing
PbTe (100) cleaved wafers - Wet (chemical) etching
PbTe (100) p-type wafers - Oxide removal
PbTe (100) wafers - Wet (chemical) etching
PbTe (100) wafers - Wet (chemical) etching
PbTe (100) wafers - Chemical polishing
PbTe (100) wafers - Chemical polishing
PbTe (100) wafers - Dislocation etching
PbTe (100) wafers - Electrolytic polishing/etching
Peroxide etchant (on germanium) - Ge (100) wafers - Wet (chemical) etching
Poly-Si grown on (100) silicon substrates - Wet (chemical) etching
Poly-Si wafers - Defects
Pr (0001) wafers - Chemical polishing
PtSb2 (100) wafers - Wet (chemical) etching
PtSb2 (100), (110) and (111) wafers - Wet (chemical) etching
PtSb2 (100), (110) and (111) wafers - Wet (chemical) etching
PtSb2 (100), (110) and (111) wafers - Wet (chemical) etching
PtSb2 (100), (110) and (111) wafers - Wet (chemical) etching
PtSb2 (100), (110) and (111) wafers - Wet (chemical) etching
PtSb2 (100), (111) and (110) wafers - Wet (chemical) etching
RC-1 etchant - GaAs (111) wafers - Dislocation etching
RCA etchant - Si wafers of all major plane orientations - Chemical cleaning
RbBr (001) wafers - Chemical polishing
RbI (001) wafers - Chemical polishing
Re (0001) wafers - Wet (chemical) etching
Re (0001) wafers - Electrolytic polishing
Re (0001) wafers - Electrolytic thinning
Ru (100) wafers - Ionized gas cleaning
S (001) wafers - Wet (chemical) etching
S (100) wafers - Wet (chemical) etching
SR4 etchant - Si (111) wafers used in a study of the variations in surface conductivity of silicon and Germanium
SSA etchant - GaAs wafers - Electrolytic etching
Sb (0001) wafers - Wet (chemical) etching
Sb (0001) wafers cleaved under LN2 - Chemical polishing
Sb (0001) wafers cleaved under LN2 - Chemical polishing
Sb (0001) wafers cleaved under LN2 - Cleave
Sc (0001) wafers - Chemical polishing
Sc (0001) wafers - Chemical polishing
Schell's etchant - GaAs (111) wafers - Wet (chemical) etching
Schimmel's etch technique - Wet (chemical) etching
Schimmel's etchant - Si (111) and (100) wafers used as substrates for silicon epitaxy growth - Wet (chemical) etching
Se single crystal wafers - Wet (chemical) etching
Se single crystal wafers - Wet (chemical) etching
Secco's etchant - Dislocation etching
Secco's etchant - Si (111) and (100), p-type, 1-10,000 Ohm cm resistivity wafers - Wet (chemical) etching
Si (100) and (110) wafers - Wet (chemical) etching
Si (100) and (111) wafers - Acid passivation
Si (100) and (111) wafers - Acid, float-off
Si (100) and (111) wafers both n- and p-type - Chemical thinning
Si (100) and (111) wafers used in a study of carbon and oxygen contamination - Wet (chemical) etching
Si (100) and (111) wafers, n-type, 10-30 Ohm cm resistivity - Wet (chemical) etching
Si (100) and GaAs (100) wafers - Chemical cleaning
Si (100) as-doped, 10 Ohm cm resistivity wafers - Chemical cleaning
Si (100) n-type 3-6 Ohm cm resistivity wafers - Ionized gas etching
Si (100) n-type wafer - Wet (chemical) etching
Si (100) n-type wafer used as substrate - Wet (chemical) etching
Si (100) n-type wafers - Colloid replication
Si (100) n-type wafers with a p+ Si epitaxy buffer layer - Chemical conditioning
Si (100) n-type wafers, 10 Ohm cm resistivity - Wet (chemical) etching
Si (100) n-type, 2-5 Ohm cm resistivity wafers - Wet (chemical) etching
Si (100) p- and n-type substrates - Wet (chemical) etching
Si (100) p-type wafers - Dislocation etching - Secco's etchant, modified
Si (100) p-type wafers with SiO2 films - Ionized gas etching
Si (100) p-type wafers, 1.2-1.8 Ohm cm resistivity - Chemical cleaning
Si (100) p-type, 4-6 Ohm cm resistivity wafers - Wet (chemical) etching
Si (100) wafers - Chemical cleaning
Si (100) wafers - Chemical cleaning
Si (100) wafers - Chemical cleaning
Si (100) wafers - Wet (chemical) etching
Si (100) wafers - Wet (chemical) etching
Si (100) wafers - Wet (chemical) etching
Si (100) wafers - Chemical jet thinning
Si (100) wafers - Chemical thinning
Si (100) wafers - Chemical thinning
Si (100) wafers - Physical etching
Si (100) wafers - Ionized gas etching
Si (100) wafers - Ionized gas etching
Si (100) wafers - Thermal oxidation
Si (100) wafers 100 mm thick - Wet (chemical) etching
Si (100) wafers and other orientations - Abrasive polishing
Si (100) wafers and other orientations - Abrasive polishing
Si (100) wafers unpassivated surfaces or with SiO2 or TaSi2 thin films - Chemical cleaning
Si (100) wafers used as substrates - Wet (chemical) etching
Si (100) wafers used as substrates for RF sputter of SeGe thin films - Wet (chemical) etching
Si (100) wafers used as substrates for epitaxy growth - Wet (chemical) etching
Si (100) wafers used as substrates for epitaxy growth - Gas cleaning
Si (100) wafers used as substrates in a study of oxide and nitride - Wet (chemical) etching
Si (100) wafers used as substrates with an SiO2 thin film - Physical etching
Si (100) wafers used as substrates with p-doped and undoped poly - Si and SiO2 thin films - Ionized gas etching
Si (100) wafers used for MOCVD growth of SiO2 thin films - Chemical cleaning
Si (100) wafers used in an anisotropic etch study - Wet (chemical) etching
Si (100) wafers used in developing the Secco's etchant - Chemical polishing
Si (100) wafers with SiO2 thin films - Ionized gas etching
Si (100) wafers with thermal SiO2 thin films - Ionized gas etching
Si (100) wafers, n-type - Chemical polishing/etching
Si (100) wafers, n-type, 10-30 Ohm cm resistivity - Wet (chemical) etching
Si (100) wafers, p-type, 2 Ohm cm resistivity - Chemical thinning
Si (100), n- and p-type wafers, 20 and 25 Ohm cm resistivity - Chemical cleaning
Si (100), n-type, 3-6 Ohm cm resistivity wafers - Wet (chemical) etching
Si (100), n-type, 4-7 Ohm cm resistivity wafers - Chemical cleaning
Si (100), n-type, 5-9 Ohm cm resistivity wafers - Chemical cleaning
Si (100), n-type, 5-9 Ohm cm resistivity wafers - Chemical cleaning
Si (100), p- and n-type wafers, 1-10 Ohm cm resistivity - Wet (chemical) etching
Si (100), p-type, 2 Ohm cm resistivity wafers - Chemical cleaning
Si (110) wafers with a thermally grown SiO2 thin film - Wet (chemical) etching
Si (110), (112), and (113) wafers for p-p+ epitaxy - Chemical cleaning
Si (111) 10-20 Ohm cm resistivity, n-type wafers - Wet (chemical) etching
Si (111) and (100) n- and p-type wafers - Chemical jet polishing
Si (111) and (100) wafers - Chemical cleaning
Si (111) and (100) wafers - Wet (chemical) etching
Si (111) and (100) wafers - Electrolytic oxidation
Si (111) and (100) wafers and ingots - Alkali, orientation
Si (111) and (100) wafers and spheres - Wet (chemical) etching
Si (111) and (100) wafers used as substrates for silicon MBE thin film epitaxy growth - Wet (chemical) etching
Si (111) and (100) wafers used in a study of defects - Powder, defect ehnancement
Si (111) and (100) wafers, both n- and p-type - Electrolytic etching
Si (111) and (100) wafers, n-type 10-30 Ohm cm resistivity - Wet (chemical) etching
Si (111) and (100) wafers, n-type, 10-30 Ohm cm resistivity - Wet (chemical) etching
Si (111) and (100) wafers, p- and n-type of varied resistivity - Electrolytic oxidation
Si (111) and (100) wafers, p- and n-type, 0.2-20 Ohm cm resistivity - Chemical cleaning
Si (111) and (110) wafers - Wet (chemical) etching
Si (111) and (110) wafers cut from CZ grown ingots - Wet (chemical) etching
Si (111) n- and p-type wafers - Chemical cleaning
Si (111) n-type 3-5 Ohm cm resistivily wafers - Wet (chemical) etching
Si (111) n-type wafers - Chemical polishing
Si (111) n-type wafers - Electrolytic jet polishing
Si (111) n-type wafers - Electrolytic jet polishing
Si (111) n-type wafers - Electrolytic jet polishing
Si (111) n-type wafers 5 Ohm cm resistivity - Thermal cleaning
Si (111) n-type wafers with boron diffused p-n junctions - Wet (chemical) etching
Si (111) n-type wafers with diffused p-type layers - Wet (chemical) etching
Si (111) n-type wafers with p-n junctions - Chemical junction etching
Si (111) n-type wafers, 1.63 Ohm cm resistivity - Chemical cleaning
Si (111) n-type wafers, 130 Ohm cm resistivity - Chemical polishing
Si (111) n-type wafers, 15-20 Ohm cm resistivity - Wet (chemical) etching
Si (111) n-type wafers, 5-120 Ohm cm resistivity - Acid forming
Si (111) n-type wafers, 5-120 Ohm cm resistivity - Dislocation etching
Si (111) n-type wafers, 5-50 Ohm cm resistivity - Acid forming
Si (111) n-type wafers, 50-500 Ohm cm resistivity - Chemical polishing
Si (111) n-type, 1.5-2.5 Ohm cm resistivity wafers - Wet (chemical) etching
Si (111) p- and n-type wafers, 8 Ohm cm resistivity - Wet (chemical) etching
Si (111) p- and n-type, 20 and 25 Ohm cm resistivity wafers - Chemical cleaning
Si (111) p-type 2-10 Ohm cm resistivity wafers - Gas oxidation
Si (111) p-type wafers - Chemical cleaning
Si (111) p-type wafers, 7-21 Ohm cm resistivity - Chemical cleaning
Si (111) wafer and other orientations - Wet (chemical) etching
Si (111) wafer substrates used for epitaxy growth of GaP - Chemical cleaning
Si (111) wafers
Si (111) wafers - Chemical cleaning
Si (111) wafers - Chemical cleaning
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching
Si (111) wafers - Wet (chemical) etching - Sirtl's etchant modified
Si (111) wafers - Chemical polishing
Si (111) wafers - Chemical polishing
Si (111) wafers - Chemical polishing
Si (111) wafers - Chemical polishing
Si (111) wafers - Chemical polishing
Si (111) wafers - Chemical polishing/thinning
Si (111) wafers - Dislocation etching
Si (111) wafers - Abrasive polishing
Si (111) wafers - Acid, pinhole, jet
Si (111) wafers - Gas etching
Si (111) wafers - Metal decoration
Si (111) wafers - Metal, dislocation
Si (111) wafers - Physical etching
Si (111) wafers and other orientations - Abrasive polishing
Si (111) wafers and other orientations - Chemical ecthing
Si (111) wafers and other orientations - Wet (chemical) etching
Si (111) wafers and other orientations - Wet (chemical) etching
Si (111) wafers and other orientations - Wet (chemical) etching
Si (111) wafers and other orientations - Chemical polishing
Si (111) wafers and other orientations - Chemical polishing
Si (111) wafers and other orientations - Chemical polishing/etching
Si (111) wafers and other orientations - Chemical polishing/thinning
Si (111) wafers and other orientations - Si (111) wafers and other orientations
Si (111) wafers and other orientations with n- and p-type resistivity - Chemical polishing
Si (111) wafers and whiskers - Gas etching
Si (111) wafers both p- and n-type - Electrolytic polishing
Si (111) wafers fabricated as barrier diodes - Wet (chemical) etching
Si (111) wafers used as substrate for deposition of a-C - Chemical cleaning
Si (111) wafers used as substrates for epitaxy growth of silicon - Chemical polishing
Si (111) wafers used as substrates for epitaxy growth of silicon - Chemical thinning
Si (111) wafers used in a defect study - Wet (chemical) etching
Si (111) wafers used in a defect study - Wet (chemical) etching
Si (111) wafers used in a defect study - Electrolytic etching/polishing
Si (111) wafers used in a study of Ag and Fe ion contamination - Chemical polishing
Si (111) wafers used in a study of electrolytic polishing with HF - Electrolytic polishing
Si (111) wafers used in a study of light induced plasticity - Wet (chemical) etching
Si (111) wafers used in a study of selenium adsorption - Chemical cleaning
Si (111) wafers used in a study of stacking fault energy - Chemical thinning
Si (111) wafers with diffused n-p-n junctions - Electrolytic junction etching
Si (111) wafers with high boron doping - Chemical cleaning
Si (111) wafers with n+/n diffusion - Wet (chemical) etching
Si (111) wafers with p-n junctions - Chemical junction etching
Si (111) wafers, 5-50 Ohm cm resistivity, n-type - Chemical polishing
Si (111) wafers, boron diffused p-type - Wet (chemical) etching
Si (111) wafers, n-type, 5-10 Ohm cm resistivity - Chemical polishing
Si (111) wafers, n-type, used to fabricate diffused p-n-p transistors - Chemical polishing
Si (111) wafers, p- and n-type - Wet (chemical) etching
Si (111) wafers, p-type - Wet (chemical) etching
Si (111) wafers, p-type, 7-21 Ohm cm resistivity - Chemical jet thinning
Si (111), (100) and (110) wafers - Chemical polishing
Si (111), (100) and (110) wafers - Thermal etching
Si (111), (100) and (110) wafers and a 1 cm diameter sphere - Wet (chemical) etching
Si (111), (100) and (110) wafers, n-type 0.1-0.7 Ohm cm and p-type 0.4-3 Ohm cm resistivity - Ionized gas thinning
Si (111), (100) wafers - Chemical polishing/thinning
Si (111), (100) wafers as substrates for deposition of Si3N4 - Wet (chemical) etching
Si (111), (100) wafers n-type 10-30 Ohm cm resistivity - Wet (chemical) etching
Si (111), (100), (112) and (110) oriented wafers - Chemical polishing
Si (111), (100), and (110) wafers and ingots - Wet (chemical) etching
Si (111), (100), n- and p-type wafers - Chemical polishing
Si (111), n-type and (110), p-type wafers - Wet (chemical) etching
Si (111), n-type, 1-10 Ohm cm resistivity wafers - Wet (chemical) etching
Si (111), n-type, 10-15 Ohm cm resistivity wafers - Chemical polishing
Si (111), n-type, 3-5 Ohm cm resistivity wafers - Chemical cleaning
Si (111), p- and n-type wafers - Wet (chemical) etching
Si (111), p-type (intrinsic) and doped (extrinsic) wafers - Chemical cleaning
Si (111), p-type wafers used as substrates for tungsten deposition - Chemical cleaning
Si (111), p-type wafers, 0.1-200 Ohm cm resistivity - Chemical polishing
Si and Ge (111) wafers and other orientations - Chemical polishing
Si and Ge wafers - Chemical polishing
Si and Ge wafers - Electrolytic cleaning
Si as 15 mm square cut and oriented cubes (100) - Neutron damage
Si as p+-n solar cells - Chemical cleaning
Si as poly-Si films on Si (100) substrates - Electrolytic decoration
Si n- and p-type wafers - Electrolytic polishing
Si p-n junction wafers - Wet (chemical) etching
Si p-type wafers - Wet (chemical) etching
Si p-type wafers - Electrolytic polishing
Si single crystal wafers - Wet (chemical) etching
Si specimens - Chemical polishing
Si wafers - Chemical cleaning
Si wafers - Chemical cleaning
Si wafers - Wet (chemical) etching
Si wafers - Wet (chemical) etching
Si wafers - Wet (chemical) etching
Si wafers - Chemical polishing
Si wafers - Electrolytic polishing
Si wafers - Electrolytic polishing
Si wafers - Gas etching
Si wafers - Ionized gas, structure
Si wafers - Surface treatment
Si wafers - Surface treatment
Si wafers - Surface treatment
Si wafers and other orientations - Chemical polishing
Si wafers of different orientations - Wet (chemical) etching
Si wafers of different orientations - Electrolytic polishing
Si wafers of various orientations - Wet (chemical) etching
Si wafers of various orientations - Ionized gas etching
Si wafers used as substrates for growth of silicides - Ionized gas etching
Si wafers used as substrates for silicon epitaxy as Si/Si - Gas contamination
Si wafers with p-n junctions - Wet (chemical) etching
Si wafers with p-n junctions - Chemical junction etching
Si(100) wafers - Ionized gas etching
SiC (0001) wafers - Dislocation etching
SiC (0001) wafers - Gas polishing
SiC (0001) wafers - Molten flux etching
SiC (111) wafers - Molten flux etching
SiC n-type wafers doped with aluminum - Metal doping
SiSn thin films deposited on (100) silicon wafers - Wet (chemical) etching
Silicon defect delineation etches - Wet (chemical) etching
Silicon oxide wafer etch process
Silver etchant - Si (111) wafers - Dislocation etching
Silver glycol etchant - Si (111) wafers and other orientation - Wet (chemical) etching
Sirtl's etchant - Dislocation etching
Sirtl's etchant - Si (111) wafers and other orientations - Wet (chemical) etching
Sirtl's etchant - SiC (0001) wafers - Chemical polishing
Sirtl's etchant, modified - Si (111), (110) and (211) wafers, ingots - Wet (chemical) etching
SmBr3 (0001) wafers - Alcohol polishing
Sn (001) and (111) wafers - Electrolytic polishing
Sn (010) wafers - Wet (chemical) etching
Sn specimen, 1/4" wafer in diameter - Acid, cutting
SnTe (100) wafers - Chemical polishing
Sopori's etchant - Si (111) wafers and other orientations - Wet (chemical) etching
Sr (100) wafers and other orientations - Chemical polishing/etching
SrCl2 (100) wafers - Vacuum cleaning
SrGa12O19 (0001) cleaved wafers - Wet (chemical) etching
Stoke's etchant - MgO (100) wafers - Dislocation etching
Superoxol - InP (100) Zn doped p-type wafers - Chemical polishing
Superoxol etchant - Ge (111) wafers - Wet (chemical) etching
Superoxol etchant - Ge (111) wafers lithium diffused - Wet (chemical) etching
Superoxol etchant - InAs (111) wafers - Wet (chemical) etching
Superoxol etchant - InSb (111) wafers - Wet (chemical) etching
TMAH etching of silicon II - Wet (chemical) etching
TMAH etching of silicon wafers I - Wet (chemical) etching
Ta (100) wafers - Wet (chemical) etching
Te (0001) and (1010) wafers - Chemical polishing
Te (0001) and (1010) wafers - Oxide removal
Te (0001) and (1010) wafers - Te (0001) and (1010) wafers
Te (0001) and (12T0) wafers - Chemical cleaning
Te (0001) and other wafer orientations - Wet (chemical) etching
Te (0001) wafers - Chemical polishing
Te (0001) wafers - Chemical polishing
Te (0001) wafers - Sawing
Te (1010) wafers - Chemical polishing
Te (1010) wafers - Dislocation etching
Te (10T0) wafers - Wet (chemical) etching
TeO2 grown as a stable native oxide on CdTe (110) wafers - Wet (chemical) etching
ThO2 (111) wafers - Wet (chemical) etching
TiC (001) cleaved wafers - Electrolytic etching
TiC (001) cleaved wafers - Polishing
TiC (100) wafers - Gas cleaning
TiO2 (001) basal oriented wafers - Chemical cleaning
Tl (0001) wafers - Chemical cleaning
UC (001) wafers - Electrolytic jet thinning
US (001) wafers - Electrolytic jet thinning
V3Si (111) and (100) wafers - Chemical polishing
V3Si (111) wafers - Electrolytic polishing
V3Si (111), (100) wafers - Dislocation etching
Vogel's etchant - Si (111) and other oriented wafers - Dislocation etching
W (001) wafers - Wet (chemical) etching
W (001) wafers and other orientations - Acid thinning
W (001) wafers and single crystals - Electrolytic polishing
W (111) wafers as deposited thin film - Ionized gas etching
W etchant - LiF (100) wafers - Wet (chemical) etching
WAg etchant - Ge (111) wafers - Wet (chemical) etching
WRh (2%) and (6%), (100) wafers - Electrolytic polishing
Wafer cleaning - All wafers
Warekois etchant - ZnTe (111) wafers - Wet (chemical) etching
White's etchant - Ge (111) wafers - Wet (chemical) etching
White's etchant - Si (100) cleaved wafers - Chemical polishing
White's etchant - Si (111) wafers, n- and p-type - Chemical thinning
White's etchant - Si (111) wafers, n-type, 130 Ohm cm resistivity - Chemical sphere polishing
Wright's etchant - Si (100), (111), p- and n-type, 0.2-20 Ohm cm resistivity wafers - Dislocation etching
Wright-Jenkins etchant - Dislocation etching
X-l114 etchant - Ge (111) wafers - Chemical polishing
Y3Al5O12 (YAG) (110) wafers - Wet (chemical) etching
Y3Fe5O12 (0001) (YIG) wafers - Wet (chemical) etching
Y3Fe5O12 (110) wafers - Wet (chemical) etching
Y3Fe5O12 (111) wafers - Wet (chemical) etching
Y5Fe5O12 (YIG) (0001) wafer
Zn (0001) cleaved wafers
Zn (0001) single crystal wafers - Metal decoration
Zn (0001) wafers - Wet (chemical) etching
Zn (0001) wafers - Wet (chemical) etching
Zn (0001) wafers - Chemical polishing/etching
Zn (0001) wafers - Acid cutting
Zn (0001) wafers - Zn (0001) wafers used in an etch pit study
Zn (0001) wafers and ingots - Chemical polishing
Zn diffused into GaAs wafers - Wet (chemical) etching
Zn diffused into InSb, (100), n-type wafers - Wet (chemical) etching
Zn single crystal wafers - Zn single crystal wafers acid-saw cut using a braided SST wire and nitric acid
Zn wafers and single crystals - Zn (0001) cleaved wafers
ZnO (0001) and (10T0) wafers - Wet (chemical) etching
ZnO (0001) wafers from natural zincite - Wet (chemical) etching
ZnO (0O01) wafers - Chemical polishing
ZnO (1O1O) prism cut wafers - Wet (chemical) etching
ZnO single crystal wafers - Wet (chemical) etching
ZnS (0001) hexagonal wafers - Chemical cleaning
ZnS (001) wafers - Wet (chemical) etching
ZnS (100) wafers - Chemical polishing
ZnS (111) cleaved wafers - Wet (chemical) etching
ZnS (111) wafers - Wet (chemical) etching
ZnS (111) wafers - Wet (chemical) etching
ZnS (111) wafers - Dislocation etching
ZnS single crystal wafers - Wet (chemical) etching
ZnSe (100) wafers - Wet (chemical) etching
ZnSe (100) wafers - Wet (chemical) etching
ZnSe (100) wafers - Chemical polishing
ZnSe (110) wafers - Dislocation etching
ZnSe (111) (SI) wafers - Chemical cleaning
ZnSe (111) wafers - Wet (chemical) etching
ZnSe single crystal wafers - Chemical polishing
ZnSe-S (111) (SI) wafers and ZnSe single crystals - Chemical cleaning
ZnSiP2 (100) single crystal wafers - Chemical polishing
ZnTe (110) wafers and ingots - Dislocation etching
ZnTe (111) wafers - Wet (chemical) etching
ZnTe (111) wafers - Wet (chemical) etching
ZnTe (111) wafers - Wet (chemical) etching
ZnTe (111) wafers - Chemical polishing
ZnTe (111) wafers - Chemical polishing/etching
ZnTe (111) wafers - Dislocation etching
ZnTe (111) wafers - Thermal etching
ZnW (001) cleaved wafers - Wet (chemical) etching
ZnW (001) cleaved wafers - Chemical polishing
Zr (0001) and (1010) wafers - Electrolytic polishing
ZrN (100) wafers - Thermal cleaning
a-Si thin film, 300 A thick - Film removal
n-Bi2Te3 (0001) wafers - Wet (chemical) etching
n-GaP (111) and p-GaP (111) wafers - Wet (chemical) etching
p-Bi2Te3 (0001) cleaved wafers - Oxidation
p-GaP (100) wafers - Wet (chemical) etching