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CdTe single cystal ingot - Chemical cleaning

Material Name: CdTe single cystal ingot
Recipe No.: 6010
Primary Chemical Element in Material: Cd
Sample Type: Single crystal
Uses: Cleaning
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Wet (chemical) cleaning
Etchant (Electrolyte) Composition: x.... C2H7OH(1SO, IPA). Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): Temperature: RT.
Note: CdTe growth as single crystal ingot by Czochralski (CZ) method is difficult due to twinning and low angle grain boundary development. At less than 50 C, ingot is poly-CdTe. Between 50-15O C good single crystal, but some (122) directional defects. CdTe is iso-morphous with InSb. CdTe thin films grown on InSb by MBE showed high perfection of films. Clean surfaces with alcohol as shown. (Note: MBE = molecular beam epitaxy.)
CdTe ingot growth. Initial poly-CdTe ingot grown by Vertical Unseeded Vapor Growth (VUVG). Place poly-ingot in closed quartz ampoule under excess Te/Cd vapor for Vapor Transport (VT) conversion to single crystal.
Reference: Farrow, R F C et al. - Appl Phys Lett. 39,954(1981).