Alphabetical Index
Browse by Elements
Keyword Search
ASTM Electrolytes
Macro Etchants
Micro Etchants
Named Etchants
New Etchants
Al and Al Alloys
Cu and Cu Alloys
Fe and Fe Alloys
Ni and Ni Alloys
Carbide Etchants
Fluoride Etchants
Nitride Etchants
Other Etchants
Oxide Etchants
Phosphide Etchants
Single Crystal Etchants
Thin Film Etchants
Wafer Etchants
Help
Home
GaAs (100) wafers and other orientations - Chemical etching
Material Name: GaAs (100) wafers and other orientations
Recipe No.: 6497
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Wet (chemical) etching
Etchant (Electrolyte) Composition: x...0.7 M H2O2, x...1 M NaOH. Note: The volume/quantity was not shown in the referenced article and is therefore designated as an "x".
Procedure (Condition): No data
Note: GaAs (100) wafers and other orientations, except (111)A, used in a study of etched pit facet development through a silica mask to define a hole.
Reference: Perrin Walker, William H Tarn: Handbook of Metal Etchants, CRC Press, Boca Raton, Florida, USA, 1990, p.472.