GaAsP wafers as highly p-type doped with Mn

GaAsP wafers as highly p-type doped with Mn - Dislocation etching

Material Name: GaAsP wafers as highly p-type doped with Mn
Recipe No.: 6545
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Wet (dislocation) etching
Etchant (Electrolyte) Composition: 8 parts H2SO4, 1 part H2O2, 1 part H2O.
Procedure (Condition): Temperature: RT.
Note: GaAsP wafers as highly p-type doped with Mn. Solution used to develop dislocations.
Reference: Fujita, S et al. - Solid State Electron, 25,359(1982).