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InP (100) wafers - Chemical etching

Material Name: InP (100) wafers
Recipe No.: 7082
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Type (Macro/Micro): Micro
Etching Method: Wet (chemical) etching
Etchant (Electrolyte) Composition: 1 part 9 N HBr, 1 part 17 N CH3COOH (HAc), m parts K2Cr2O7 (m=0.2-2.0). * 14.7 g/100 cm3 H2O.
Procedure (Condition): Temperature: RT.
Note: InP (100) wafers used as substrates for epitaxy growth of InGaAsP. Solution will etch both materials and was used in etch forming mesa structures.
Reference: Perrin Walker, William H Tarn: Handbook of Metal Etchants, CRC Press, Boca Raton, USA, 1990, p.693.